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Infineon Technologies (BSB044N08NN3 G)
PartNo:
BSB044N08NN3 G
Manufacturers:
Infineon Technologies
Qty:
6126
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Description:
MOSFET N-CH 80V 18A WDSON-2
PDF:
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Product Information:
Packaging:
Cut Tape (CT) Alternate Packaging
Series:
-
FET Type:
MOSFET N-Channel, Metal Oxide
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
18A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs:
4.4 mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id:
1.6V @ 250μA
Gate Charge (Qg) @ Vgs:
43nC @ 10V
Input Capacitance (Ciss) @ Vds:
4630pF @ 10V
Power - Max:
2.5W
Mounting Type:
Surface Mount
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:
TO-252, (D-Pak)
1N5822
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